完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiou, JWen_US
dc.contributor.authorChiou, BSen_US
dc.date.accessioned2019-04-02T05:59:48Z-
dc.date.available2019-04-02T05:59:48Z-
dc.date.issued1997-07-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.36.4359en_US
dc.identifier.urihttp://hdl.handle.net/11536/149614-
dc.description.abstractDifferent grain sizes of ferroelectric Ba0.65Sr0.35TiO3 doped with 1.0mol% MgO and 0.05mol% MnO2 were prepared to investigate the DC field dependence of dielectric characteristics. A transition broadening is observed as grain size decreases. The broadening is attributed to the variance of lattice distortion in the materials. As the grain size increases, both the maximum dielectric constant k(max) at T-c and the dielectric tunability (percentage change of dielectric constant under a DC field) increase. A phenomenological equation can be fit to the DC field dependence of the dielectric constant. The phenomenological coefficient obtained is strongly dependent on the grain size and the temperature. Above the phase transition; a ''behavior-transformation'' temperature T-b is observed. At temperatures below T-b, the dielectric loss factor that is dominated by intrinsic loss is reduced when the DC field is applied. While at temperatures above T-b; the loss factor is dominated by the conduction loss and is raised by the DC field.en_US
dc.language.isoen_USen_US
dc.subjectdielectricen_US
dc.subjectphase transitionen_US
dc.subjectgrain sizeen_US
dc.subjectferroelectricen_US
dc.subjectCurie-Weissen_US
dc.subjectdielectric tunabilityen_US
dc.titleDC field dependence of the dielectric characteristics of doped Ba0.65Sr0.35TiO3 with various grain sizes in the paraelectric stateen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.36.4359en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume36en_US
dc.citation.spage4359en_US
dc.citation.epage4368en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997XR22300031en_US
dc.citation.woscount37en_US
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