標題: | Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition |
作者: | Tsai, JW Huang, CY Tai, YH Cheng, HC Su, FC Luo, FC Tuan, HC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-九月-1997 |
摘要: | A short H-2 plasma treatment of the gate SiNx before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiNx precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H-2 plasma damage which eventually generated a rough a-Si:H/SiNx interface. (C) 1997 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.120435 http://hdl.handle.net/11536/149629 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.120435 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 71 |
起始頁: | 1237 |
結束頁: | 1239 |
顯示於類別: | 期刊論文 |