标题: Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition
作者: Tsai, JW
Huang, CY
Tai, YH
Cheng, HC
Su, FC
Luo, FC
Tuan, HC
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
公开日期: 1-九月-1997
摘要: A short H-2 plasma treatment of the gate SiNx before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiNx precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H-2 plasma damage which eventually generated a rough a-Si:H/SiNx interface. (C) 1997 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.120435
http://hdl.handle.net/11536/149629
ISSN: 0003-6951
DOI: 10.1063/1.120435
期刊: APPLIED PHYSICS LETTERS
Volume: 71
起始页: 1237
结束页: 1239
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