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dc.contributor.authorLuo, JSen_US
dc.contributor.authorLin, WTen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorTsai, WCen_US
dc.date.accessioned2019-04-02T05:59:11Z-
dc.date.available2019-04-02T05:59:11Z-
dc.date.issued1997-10-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.365683en_US
dc.identifier.urihttp://hdl.handle.net/11536/149655-
dc.description.abstractPulsed KrF laser annealing can suppress the island structure formation and Ge segregation associated with the interfacial reactions of Ni/Si0.76Ge0.24 For the Ni/Si0.76Ge0.24 films annealed at an energy density of 0.1-0.3 J/cm(2) nickel germanosilicide associated with the amorphous overlayer was formed, while at energy densities above 0.4 J/cm(2) cellular structures of Ge-deficient S1-xGex islands surrounded by Ni(Si1-xGex)(2) due to the constitutional supercooling occurred. For the continuous Ni(Si1-xGex) films grown at 200 degrees C, subsequent laser annealing at a higher energy density of 0.6-1.0 J/cm(2) caused transformation into homogeneous Ni(Si0.76Ge0.24)(2) films without island structure and Ge deficiency which readily appeared on furnace annealing at temperatures above 400 degrees C. At energy densities above 1.6 J/cm(2) the same cellular structures as described above were also noted. (C) 1997 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titlePulsed KrF laser annealing of Ni/Si0.76Ge0.24 filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.365683en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume82en_US
dc.citation.spage3621en_US
dc.citation.epage3623en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997XY05700070en_US
dc.citation.woscount35en_US
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