Fabrication of low-stress dielectric thin-film for microsensor applications

doi:10.1109/55.644083

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chou, BCS	en_US
dc.contributor.author	Shie, JS	en_US
dc.contributor.author	Chen, CN	en_US
dc.date.accessioned	2019-04-02T05:58:45Z	-
dc.date.available	2019-04-02T05:58:45Z	-
dc.date.issued	1997-12-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.644083	en_US
dc.identifier.uri	http://hdl.handle.net/11536/149692	-
dc.description.abstract	A method of fabricating low-stress dielectric thin film as the supporting material of micromachined devices is reported. The film is processed by post thermal oxidation of silicon-rich nitride (SN) deposited on silicon substrate by LPCVD. Due to the compensation on the nitride by its top oxide, an ultra-low residual less than 10 MPa can be obtained with proper oxidation scheme. Characteristics of the oxidized nitride were analyzed by Auger electron spectroscopy (AES) and ellipsometry. Large floating membranes of 4 x 4 cm(2) and 400-nm thick can be made by this method with TMAH etching.	en_US
dc.language.iso	en_US	en_US
dc.title	Fabrication of low-stress dielectric thin-film for microsensor applications	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.644083	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	18	en_US
dc.citation.spage	599	en_US
dc.citation.epage	601	en_US
dc.contributor.department	光電工程研究所	zh_TW
dc.contributor.department	Institute of EO Enginerring	en_US
dc.identifier.wosnumber	WOS:A1997YH55200008	en_US
dc.citation.woscount	15	en_US
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