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dc.contributor.authorChiu, C. H.en_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorChao, C. L.en_US
dc.contributor.authorLo, M. H.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorYu, P. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.contributor.authorLau, K. M.en_US
dc.contributor.authorCheng, S. J.en_US
dc.date.accessioned2019-04-02T06:00:59Z-
dc.date.available2019-04-02T06:00:59Z-
dc.date.issued2008-11-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2008.06.051en_US
dc.identifier.urihttp://hdl.handle.net/11536/149716-
dc.description.abstractHigh-quality GaN layer was successfully grown on a SiO2 nanorod-array patterned sapphire substrate (NAPSS) using metal-organic chemical vapor deposition by a nanoscaled epitaxial lateral overgrowth (NELO) method. From tunneling electron microscope images, well coalescence and turned dislocations are parallel to the surface direction were clearly observed. The Raman shift measurement shows the residual stress in GaN was greatly reduced from 1.359 to 0.652 GPa when compared to a GaN on flat sapphire substrate. Also, a high-efficiency GaN-based light-emitting diodes (LEDs) were demonstrated on the NELO NAPSS GaN, the respective output power and external quantum efficiency of the NELO NAPSS LEDs were estimated to be 22 mW and 40.2% at an injection current of 20 mA, showing an enhancement factor of 52% over conventional LEDs. The significant improvement resulted from both the enhanced light extraction assisted by the NAPSS, and the reduced dislocation densities using the NELO method. (c) 2008 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectMetalorganic chemical vapor depositionen_US
dc.subjectNanoscaled epitaxial lateral overgrowthen_US
dc.subjectGaNen_US
dc.titleEfficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2008.06.051en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume310en_US
dc.citation.spage5170en_US
dc.citation.epage5174en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000262019400111en_US
dc.citation.woscount13en_US
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