完整後設資料紀錄
DC 欄位語言
dc.contributor.authorSu, Kuan-Weien_US
dc.contributor.authorChang, Ya-Tingen_US
dc.contributor.authorChen, Yung-Fuen_US
dc.date.accessioned2019-04-02T06:00:59Z-
dc.date.available2019-04-02T06:00:59Z-
dc.date.issued2008-12-10en_US
dc.identifier.issn1559-128Xen_US
dc.identifier.urihttp://dx.doi.org/10.1364/AO.47.006675en_US
dc.identifier.urihttp://hdl.handle.net/11536/149720-
dc.description.abstractAn undoped YVO4 crystal is employed to achieve efficient stimulated Raman scattering conversion in a diode-pumped actively Q-switched Nd:YAG laser. With an incident pump power of 16.2 W, an 1176 nm first Stokes average output power of 3.0 W was generated at a pulse repetition rate of 50 kHz, corresponding to an optical-to-optical conversion efficiency of 18.3%. Moreover, the maximum optical-to-optical conversion efficiency of 21.3% was found at 20 kHz. The maximum pulse energy is higher than 83 mu J at both 20 and 30 kHz. With an incident pump power of 7.6W, the underestimated peak power of 43.5 kW was demonstrated at 20 kHz with mode-locked modulation. (c) 2008 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleEfficient high-peak-power diode-pumped actively Q-switched Nd:YAG/YVO4 intracavity Raman laseren_US
dc.typeArticleen_US
dc.identifier.doi10.1364/AO.47.006675en_US
dc.identifier.journalAPPLIED OPTICSen_US
dc.citation.volume47en_US
dc.citation.spage6675en_US
dc.citation.epage6679en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000262240500027en_US
dc.citation.woscount6en_US
顯示於類別:期刊論文