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dc.contributor.authorMarinova, V.en_US
dc.contributor.authorPetrova, D.en_US
dc.contributor.authorLin, S. H.en_US
dc.contributor.authorHsieh, M. L.en_US
dc.contributor.authorHsu, K. Y.en_US
dc.date.accessioned2019-04-02T06:01:00Z-
dc.date.available2019-04-02T06:01:00Z-
dc.date.issued2009-01-01en_US
dc.identifier.issn1464-4258en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1464-4258/11/1/015201en_US
dc.identifier.urihttp://hdl.handle.net/11536/149725-
dc.description.abstractThe influence of different doping concentrations of rhodium on the light-induced and holographic properties of BGO crystal is investigated. It is found that Rh addition generates sufficient density of traps for photoinduced charge carriers such that holographic gratings are successfully recorded in the blue-green spectral range. The measured steady state diffraction efficiency at 514 nm is 0.14%, which corresponds to a refractive index modulation of Delta n similar to 1.5 x 10(-6) for higher Rh concentration. A photochromic effect and nonlinear dependence of photoconductivity on light intensity are observed indicating deep level and shallow level contributions to the charge transport mechanism of Rh-doped BGO.en_US
dc.language.isoen_USen_US
dc.subjectoptical propertiesen_US
dc.subjectphotochromic effecten_US
dc.subjectdark conductivityen_US
dc.subjectphotoconductivityen_US
dc.subjectholographyen_US
dc.titleThe influence of Rh doping on the light-induced properties of Bi4Ge3O12 single crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1464-4258/11/1/015201en_US
dc.identifier.journalJOURNAL OF OPTICS A-PURE AND APPLIED OPTICSen_US
dc.citation.volume11en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000262376000008en_US
dc.citation.woscount3en_US
Appears in Collections:Articles