完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, S. J. | en_US |
dc.contributor.author | Liu, C. Y. | en_US |
dc.contributor.author | Juang, J. Y. | en_US |
dc.contributor.author | Fang, H. W. | en_US |
dc.date.accessioned | 2019-04-02T05:59:44Z | - |
dc.date.available | 2019-04-02T05:59:44Z | - |
dc.date.issued | 2009-01-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3056374 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149730 | - |
dc.description.abstract | Room-temperature ferromagnetism was observed in Mn and Zn codoped SnO2 films grown on c-cut sapphires by using pulsed laser deposition technique. The valence of Mn ions in the codoped films is determined to be 2+ from x-ray absorption near edge spectroscopy. Moreover, the ferromagnetism is affected by the carrier concentration of the films. This result is consistent with the carrier-mediated model. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3056374] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Room-temperature ferromagnetism in Zn and Mn codoped SnO2 films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3056374 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 105 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000262534100122 | en_US |
dc.citation.woscount | 29 | en_US |
顯示於類別: | 期刊論文 |