Two-channel Kondo effects in Al/AlOx/Sc planar tunnel junctions

doi:10.1103/PhysRevB.79.012411

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yeh, Sheng-Shiuan	en_US
dc.contributor.author	Lin, Juhn-Jong	en_US
dc.date.accessioned	2019-04-03T06:42:35Z	-
dc.date.available	2019-04-03T06:42:35Z	-
dc.date.issued	2009-01-01	en_US
dc.identifier.issn	1098-0121	en_US
dc.identifier.uri	http://dx.doi.org/10.1103/PhysRevB.79.012411	en_US
dc.identifier.uri	http://hdl.handle.net/11536/149739	-
dc.description.abstract	We have measured the differential conductances G(V, T) in several Al/AlOx/Sc planar tunnel junctions between 2 and 35 K. As the temperature decreases to similar to 16 K, the zero-bias conductance G(0, T) crosses over from a standard -ln T dependence to a novel -root T dependence. Correspondingly, the finite bias conductance G(V, T) reveals a two-channel Kondo scaling behavior between similar to 4 and 16 K. The observed two-channel Kondo physics is ascribed to originating from a few localized spin-1/2 Sc atoms situated slightly inside the AlOx/Sc interface.	en_US
dc.language.iso	en_US	en_US
dc.title	Two-channel Kondo effects in Al/AlOx/Sc planar tunnel junctions	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1103/PhysRevB.79.012411	en_US
dc.identifier.journal	PHYSICAL REVIEW B	en_US
dc.citation.volume	79	en_US
dc.citation.issue	1	en_US
dc.citation.spage	0	en_US
dc.citation.epage	0	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Institute of Physics	en_US
dc.identifier.wosnumber	WOS:000262977900017	en_US
dc.citation.woscount	9	en_US
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