標題: AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser
作者: Huang, S. C.
Chang, H. L.
Su, K. W.
Li, A.
Liu, S. C.
Chen, Y. F.
Huang, K. F.
電子物理學系
Department of Electrophysics
公開日期: 1-三月-2009
摘要: An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.
URI: http://dx.doi.org/10.1007/s00340-008-3346-2
http://hdl.handle.net/11536/149741
ISSN: 0946-2171
DOI: 10.1007/s00340-008-3346-2
期刊: APPLIED PHYSICS B-LASERS AND OPTICS
Volume: 94
起始頁: 483
結束頁: 487
顯示於類別:期刊論文