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dc.contributor.authorTsay, S-F.en_US
dc.contributor.authorChung, J. Y.en_US
dc.contributor.authorHsieh, M-F.en_US
dc.contributor.authorFerng, S-S.en_US
dc.contributor.authorLou, C-T.en_US
dc.contributor.authorLin, D-S.en_US
dc.date.accessioned2019-04-02T05:59:41Z-
dc.date.available2019-04-02T05:59:41Z-
dc.date.issued2009-01-15en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.susc.2008.12.010en_US
dc.identifier.urihttp://hdl.handle.net/11536/149744-
dc.description.abstractThis study investigates ultra-thin potassium chloride (KCl) films on the Si(1 0 0)-2 x 1 surfaces at near room temperature. The atomic structure and growth mode of this ionic solid film on the covalent bonded semiconductor surface is examined by synchrotron radiation core level photoemission, scanning tunneling microscopy and ab initio calculations. The Si 2p, K 3p and Cl 2p core level spectra together indicate that adsorbed KCl molecules at submonolayer coverage partially dissociate and that KCl overlayers; above one monolayer (ML) have similar features in the valance band density of states as those of the bulk KCl crystal. STM results reveal a novel c(4 x 4) structure at 1 ML coverage. Ab initio calculations show that a model that comprises a periodic pyramidal geometry is consistent with experimental results. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAlkali halidesen_US
dc.subjectSilicon vgermaniumen_US
dc.subjectScanning tunneling microscopyen_US
dc.subjectSynchrotron radiation photoelectron spectroscopyen_US
dc.subjectEpitaxyen_US
dc.subjectSurface relaxation and reconstructionen_US
dc.subjectThin film structuresen_US
dc.subjectSemiconductor - insulator interfacesen_US
dc.titleGrowth mode and novel structure of ultra-thin KCl layers on the Si(100)-2 x 1 surfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.susc.2008.12.010en_US
dc.identifier.journalSURFACE SCIENCEen_US
dc.citation.volume603en_US
dc.citation.spage419en_US
dc.citation.epage424en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000263384500026en_US
dc.citation.woscount6en_US
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