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dc.contributor.authorWu, Ming-Chengen_US
dc.contributor.authorLee, Chi-Shenen_US
dc.date.accessioned2019-04-02T05:59:42Z-
dc.date.available2019-04-02T05:59:42Z-
dc.date.issued2009-03-05en_US
dc.identifier.issn0025-5408en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.materresbull.2008.06.034en_US
dc.identifier.urihttp://hdl.handle.net/11536/149750-
dc.description.abstractA procedure to grow alpha-MoO3 nanocrystals of rod and belt forms under mild conditions involved deposition onto a glass substrate via vapor transport with a water-soluble precursor. Scanning electron and transmission electron microscopic studies, selected-area electron diffraction and powder X-ray analyses indicate that these alpha-MoO3 nanocrystals exhibit rod or belt forms that grow along [0 0 1] and became vertically aligned on the glass substrate. Such deposition is effective to form thin films of controllable size and density of coverage on varying the precursor concentration and the duration of deposition. (C) 2008 Published by Elsevier Ltd.en_US
dc.language.isoen_USen_US
dc.subjectOxidesen_US
dc.subjectCrystal growthen_US
dc.subjectVapor depositionen_US
dc.subjectX-ray diffractionen_US
dc.subjectMicrostructureen_US
dc.titlealpha-MoO3 nanocrystals of controlled size on a glass substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.materresbull.2008.06.034en_US
dc.identifier.journalMATERIALS RESEARCH BULLETINen_US
dc.citation.volume44en_US
dc.citation.spage629en_US
dc.citation.epage632en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department應用化學系分子科學碩博班zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Molecular scienceen_US
dc.identifier.wosnumberWOS:000263657800026en_US
dc.citation.woscount9en_US
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