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dc.contributor.authorLin, D. Y.en_US
dc.contributor.authorLin, H. J.en_US
dc.contributor.authorWu, J. S.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorYang, C. S.en_US
dc.contributor.authorWang, J. S.en_US
dc.date.accessioned2019-04-02T05:59:42Z-
dc.date.available2019-04-02T05:59:42Z-
dc.date.issued2009-03-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3078034en_US
dc.identifier.urihttp://hdl.handle.net/11536/149754-
dc.description.abstractWe present a systematic study of temperature-dependent reflectance (R) and photoluminescence (PL) measurements on ZnMnO films grown by plasma-assisted molecular beam epitaxy. For the first time, the three free-exciton transitions FXA (Gamma(7c)-Gamma(u)(7v)), FXB (Gamma(7c)-Gamma(9v)), and FXC (Gamma(7c)-Gamma(l)(7v)) and the longitudinal-optical phonon replicas of FXB and FXC of ZnMnO films have been clearly observed in the R spectra. The parameters describing the activation energy and the temperature dependence of the transition energy and broadening have been extracted by fitting the experimental R and PL spectra. The spectral data of ZnMnO films not only show the deterioration of crystalline quality with increasing Mn composition fraction but also indicate the Mn clustering caused by Mn atom segregation.en_US
dc.language.isoen_USen_US
dc.subjectaluminaen_US
dc.subjectferromagnetic materialsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectmagnetic epitaxial layersen_US
dc.subjectmolecular beam epitaxial growthen_US
dc.subjectphononsen_US
dc.subjectphotoluminescenceen_US
dc.subjectplasma materials processingen_US
dc.subjectreflectivityen_US
dc.subjectsegregationen_US
dc.subjectsemiconductor epitaxial layersen_US
dc.subjectsemimagnetic semiconductorsen_US
dc.subjectspectral line broadeningen_US
dc.subjectwide band gap semiconductorsen_US
dc.subjectzinc compoundsen_US
dc.titleA comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1-xMnxO thin films grown on c-Al2O3en_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3078034en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume105en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000264156300026en_US
dc.citation.woscount3en_US
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