Physical properties of amorphous InGaZnO4 films doped with Mn

doi:10.1063/1.3095505

標題:	Physical properties of amorphous InGaZnO4 films doped with Mn
作者:	Liu, Shiu-Jen Fang, Hau-Wei Su, Shih-Hao Li, Chia-Hung Cherng, Jyh-Shiarn Hsieh, Jang-Hsing Juang, Jenh-Yih 電子物理學系 Department of Electrophysics
關鍵字:	amorphous semiconductors;carrier density;carrier mobility;doping profiles;electrical resistivity;ferromagnetic materials;gallium compounds;indium compounds;magnetic thin films;magnetisation;manganese;optical constants;pulsed laser deposition;semiconductor doping;semiconductor growth;semiconductor thin films;semimagnetic semiconductors;visible spectra;wide band gap semiconductors
公開日期:	2-三月-2009
摘要:	Amorphous InGaZnO4 (a-IGZO) films doped with various concentrations of Mn have been fabricated by using pulsed-laser deposition technique. Optical, electrical, and magnetic properties of the prepared Mn-doped a-IGZO films were investigated. The resistivity, carrier concentration, and carrier mobility of the a-IGZO films were found to be, respectively, increased, decreased, and enhanced by Mn doping. Moreover, the optical transmission is slightly increased in the visible range and the optical band gaps are not affected in the Mn-doped films. Room-temperature ferromagnetism has been observed in the field-dependent magnetization measurements.
URI:	http://dx.doi.org/10.1063/1.3095505 http://hdl.handle.net/11536/149758
ISSN:	0003-6951
DOI:	10.1063/1.3095505
期刊:	APPLIED PHYSICS LETTERS
Volume:	94
顯示於類別：	期刊論文