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dc.contributor.authorTsai, Y. T.en_US
dc.contributor.authorChang, W. J.en_US
dc.contributor.authorHuang, S. W.en_US
dc.contributor.authorLin, J. -Y.en_US
dc.contributor.authorLee, J. Y.en_US
dc.contributor.authorChen, J. M.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorGou, Y. S.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.date.accessioned2019-04-02T05:59:40Z-
dc.date.available2019-04-02T05:59:40Z-
dc.date.issued2009-05-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physb.2008.12.038en_US
dc.identifier.urihttp://hdl.handle.net/11536/149777-
dc.description.abstractThe temperature-dependent X-ray absorption near-edge spectroscopy (XANES) of LaMnO3 thin films doped with various divalent ions was systematically carried out to investigate the effects of the ion size and associated Jahn-Teller distortions (JTDs) on the electronic structure modifications. Doped LaMnO3 thin films were grown on (100) SrTiO3 and (110) NdGaO3 substrates by pulsed-laser deposition with typical thickness of 250-300 nm. Temperature-dependent resistivity p(T) and magnetization M(T) were measured. The results indicate that the drastic changes in magneto-transport properties induced by the substitution of A-site ion and the splitting of the O K-edge pre-edge peak associated with the e(g)(up arrow) and t(2g)(down arrow) energy levels at low temperatures in La1-xCaxMnO3 and La1-xSrxMnO3 (x = 0.3, 0.375) may both relate to the lattice disorder and the associated JTD effects on modifying the electronic structure of doped-LaMnO3. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectXANESen_US
dc.subjectJahn-Teller distortionen_US
dc.subjectLaMnO3en_US
dc.titleTemperature-dependent X-ray absorption near edge spectroscopy of doped LaMnO3: Ion-size and the Jahn-Teller distortion effectsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.physb.2008.12.038en_US
dc.identifier.journalPHYSICA B-CONDENSED MATTERen_US
dc.citation.volume404en_US
dc.citation.spage1404en_US
dc.citation.epage1408en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000265886100069en_US
dc.citation.woscount6en_US
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