標題: Epitaxy of m-plane ZnO on (112) LaAlO3 substrate
作者: Ho, Yen-Teng
Wang, Wei-Lin
Peng, Chun-Yen
Chen, Wei-Chun
Liang, Mei-Hui
Tian, Jr. -Sheng
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-五月-2009
摘要: Heteroepitaxial growth of non-polar in-plane (10 (1) over bar0) ZnO has been demonstrated on (112) LaAlO3 single crystal substrates using the pulsed laser deposition method. X-ray diffraction, reflection high energy electron diffraction, and cross-sectional transmission electron microscopy with selected-area diffraction, have been used to characterize the structural properties of deposited ZnO films. The epitaxial relationship between ZnO and LAO is shown to be (10 (1) over bar0)(ZnO) parallel to (112)(LAO), (11 (2) over bar0)(ZnO) parallel to ((1) over bar(1) over bar1)(LAO), and [0001](ZnO) parallel to [(1) over bar 10](LAO). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI: http://dx.doi.org/10.1002/pssr.200903009
http://hdl.handle.net/11536/149787
ISSN: 1862-6254
DOI: 10.1002/pssr.200903009
期刊: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume: 3
起始頁: 109
結束頁: 111
顯示於類別:期刊論文