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dc.contributor.authorChen, H. R.en_US
dc.contributor.authorLin, J. H.en_US
dc.contributor.authorSong, K. T.en_US
dc.contributor.authorLin, K. H.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.date.accessioned2019-04-02T06:00:14Z-
dc.date.available2019-04-02T06:00:14Z-
dc.date.issued2009-07-01en_US
dc.identifier.issn0946-2171en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00340-009-3491-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/149790-
dc.description.abstractWe demonstrated a diode-pumped passively mode-locked c-cut Nd:LuVO4 picosecond laser with a semiconductor saturable-absorber mirror (SESAM) at a wavelength of 1067.8 nm. Due to the wide bandwidth of 0.48 nm, stable mode-locking has been generated with a duration as short as 3.7 ps, which is shorter than for the a-cut Nd:LuVO4 laser. A maximum output power of 1.67 W was achieved to give a highest peak power of 3.47 KW at 18 W absorbed pump power.en_US
dc.language.isoen_USen_US
dc.titlePassive mode-locking in diode-pumped c-cut Nd:LuVO4 laser with a semiconductor saturable-absorber mirroren_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00340-009-3491-2en_US
dc.identifier.journalAPPLIED PHYSICS B-LASERS AND OPTICSen_US
dc.citation.volume96en_US
dc.citation.spage19en_US
dc.citation.epage23en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000266813000004en_US
dc.citation.woscount11en_US
Appears in Collections:Articles


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