完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, H. R. | en_US |
dc.contributor.author | Lin, J. H. | en_US |
dc.contributor.author | Song, K. T. | en_US |
dc.contributor.author | Lin, K. H. | en_US |
dc.contributor.author | Hsieh, W. F. | en_US |
dc.date.accessioned | 2019-04-02T06:00:14Z | - |
dc.date.available | 2019-04-02T06:00:14Z | - |
dc.date.issued | 2009-07-01 | en_US |
dc.identifier.issn | 0946-2171 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1007/s00340-009-3491-2 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149790 | - |
dc.description.abstract | We demonstrated a diode-pumped passively mode-locked c-cut Nd:LuVO4 picosecond laser with a semiconductor saturable-absorber mirror (SESAM) at a wavelength of 1067.8 nm. Due to the wide bandwidth of 0.48 nm, stable mode-locking has been generated with a duration as short as 3.7 ps, which is shorter than for the a-cut Nd:LuVO4 laser. A maximum output power of 1.67 W was achieved to give a highest peak power of 3.47 KW at 18 W absorbed pump power. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Passive mode-locking in diode-pumped c-cut Nd:LuVO4 laser with a semiconductor saturable-absorber mirror | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/s00340-009-3491-2 | en_US |
dc.identifier.journal | APPLIED PHYSICS B-LASERS AND OPTICS | en_US |
dc.citation.volume | 96 | en_US |
dc.citation.spage | 19 | en_US |
dc.citation.epage | 23 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 光電工程研究所 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of EO Enginerring | en_US |
dc.identifier.wosnumber | WOS:000266813000004 | en_US |
dc.citation.woscount | 11 | en_US |
顯示於類別: | 期刊論文 |