標題: | Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory |
作者: | Feng, Li-Wei Chang, Chun-Yen Chang, Ting-Chang Tu, Chun-Hao Wang, Pai-Syuan Lin, Chao-Cheng Chen, Min-Chen Huang, Hui-Chun Gan, Der-Shin Ho, New-Jin Chen, Shih-Ching Chen, Shih-Cheng 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Nonvolatile memory;Nanocrystals;Germanosilicide;Titanium;Sputtering;Transmission electron microscopy;X-ray photoelectron microscopy |
公開日期: | 30-十一月-2011 |
摘要: | Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 degrees C, and separated well at 600 degrees C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 degrees C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 degrees C annealing. The electrical characteristics of data retention in the sample with the 600 degrees C annealing exhibited better performance than the 500 C-annealed sample, a result associated with the better separation and better crystallization of the NC structures. (C) 2011 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2011.08.025 http://hdl.handle.net/11536/14980 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2011.08.025 |
期刊: | THIN SOLID FILMS |
Volume: | 520 |
Issue: | 3 |
起始頁: | 1136 |
結束頁: | 1140 |
顯示於類別: | 會議論文 |