完整後設資料紀錄
DC 欄位語言
dc.contributor.authorKuo, C. C.en_US
dc.contributor.authorLiu, W. -R.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorHsu, H. C.en_US
dc.contributor.authorChen, L. C.en_US
dc.date.accessioned2019-04-02T06:00:10Z-
dc.date.available2019-04-02T06:00:10Z-
dc.date.issued2009-07-06en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3159470en_US
dc.identifier.urihttp://hdl.handle.net/11536/149807-
dc.description.abstractCrystal symmetry breaking of wurtzite C-6V to orthorhombic C-2V due to in-plane anisotropic strain was investigated for nonpolar (11 (2) over bar0) ZnO epifilms grown on the R-sapphire. X-ray diffraction results reveal the epilayer is subjected to a compressive strain along the polar c-axis and tensile strains along both a-[11 (2) over bar0] surface normal and in-plane p-[1 (1) over bar 00] axis. The polarized Raman spectra of E-2 modes reveal violation of the C-6V selection rules. Oppositely, the C-2V configuration satisfies the selection rules for the Raman modes. The observed E-1 and E-2 bands in polarized optical reflection and photoluminescence spectra confirm the anisotropic strain causes the structure change to the orthorhombic one. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3159470]en_US
dc.language.isoen_USen_US
dc.titleCrystal symmetry breaking of wurtzite to orthorhombic in nonpolar a-ZnO epifilmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3159470en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume95en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000267983200026en_US
dc.citation.woscount17en_US
顯示於類別:期刊論文