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dc.contributor.authorHuang, S. C.en_US
dc.contributor.authorCheng, H. L.en_US
dc.contributor.authorChen, Yi-Fanen_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorHuang, K. F.en_US
dc.date.accessioned2019-04-02T06:00:09Z-
dc.date.available2019-04-02T06:00:09Z-
dc.date.issued2009-08-01en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.34.002348en_US
dc.identifier.urihttp://hdl.handle.net/11536/149821-
dc.description.abstractWe demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd:YVO4 laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated. (C) 2009 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleDiode-pumped passively mode-locked 1342 nm Nd:YVO4 laser with an AlGaInAs quantum-well saturable absorberen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.34.002348en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume34en_US
dc.citation.spage2348en_US
dc.citation.epage2350en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000269405900035en_US
dc.citation.woscount22en_US
Appears in Collections:Articles


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