標題: | Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays |
作者: | Hong, Chi-Chang Ahn, Hyeyoung Wu, Chen-Ying Gwo, Shangjr 光電工程學系 光電工程研究所 Department of Photonics Institute of EO Enginerring |
公開日期: | 28-九月-2009 |
摘要: | We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa1-xN) nanorod arrays. The formation of InxGa1-xN/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa1-xN nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America |
URI: | http://dx.doi.org/10.1364/OE.17.017227 http://hdl.handle.net/11536/149833 |
ISSN: | 1094-4087 |
DOI: | 10.1364/OE.17.017227 |
期刊: | OPTICS EXPRESS |
Volume: | 17 |
Issue: | 20 |
起始頁: | 17227 |
結束頁: | 17233 |
顯示於類別: | 期刊論文 |