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dc.contributor.authorLu, K. T.en_US
dc.contributor.authorChen, J. M.en_US
dc.contributor.authorLee, J. M.en_US
dc.contributor.authorHaw, S. C.en_US
dc.contributor.authorChou, T. L.en_US
dc.contributor.authorChen, S. A.en_US
dc.contributor.authorChen, T. H.en_US
dc.date.accessioned2019-04-03T06:37:36Z-
dc.date.available2019-04-03T06:37:36Z-
dc.date.issued2009-09-01en_US
dc.identifier.issn1050-2947en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevA.80.033406en_US
dc.identifier.urihttp://hdl.handle.net/11536/149834-
dc.description.abstractThe dissociation dynamics of anionic and excited neutral fragments of gaseous CCl4 and CCl4 adsorbed on Si(100) similar to 90 K following Cl 2p core-level excitations were investigated on combining measurements of photon-induced anionic dissociation, x-ray absorption, and uv-visible dispersed fluorescence. The transitions of core electrons to high Rydberg states or doubly excited states near Cl 2p ionization thresholds of gaseous CCl4 remarkably enhance the production of excited neutral fragments (C* and CCl*); this enhancement is attributed to the contribution from the shake-modified resonant Auger decay and/or postcollision interaction (PCI). The Cl-anion is significantly reinforced in the vicinity of the Cl 2p(1/2,3/2) ionization threshold of gaseous CCl4, originating from PCI-mediated photoelectron recapture. The Cl 2p -> 7a(1)* excitation for CCl4/Si(100) at similar to 90 K enhances the Cl- desorption yield at a submonolayer level. This resonant enhancement of Cl-yield at the 7a(1)* resonance in the Cl 2p edge at a submonolayer level occurs through the formation of high-lying molecular-ion states of CCl4 adsorbed on a Si surface.en_US
dc.language.isoen_USen_US
dc.titleCore-level anionic photofragmentation of gaseous CCl4 and solid-state analogsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevA.80.033406en_US
dc.identifier.journalPHYSICAL REVIEW Aen_US
dc.citation.volume80en_US
dc.citation.issue3en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000270383900115en_US
dc.citation.woscount6en_US
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