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dc.contributor.authorHuang, J. Y.en_US
dc.contributor.authorZhuang, W. Z.en_US
dc.contributor.authorHuang, W. C.en_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorHu, C.en_US
dc.contributor.authorHuang, K. F.en_US
dc.contributor.authorChen, Y. F.en_US
dc.date.accessioned2019-04-03T06:37:34Z-
dc.date.available2019-04-03T06:37:34Z-
dc.date.issued2009-11-09en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.17.020800en_US
dc.identifier.urihttp://hdl.handle.net/11536/149851-
dc.description.abstractWe demonstrate comparative studies for Cr4+:YAG crystal and AlGaInAs quantum-well (QW) used as a saturable absorbers in passively Q-switched Yb-doped fiber lasers. Both saturable absorbers were designed to be possessed of nearly the same initial transmission. Under a pump power of 24 W, the average output powers were up to 14.4 W and 13.8 W obtained with the AlGaInAs QWs and with the Cr4+:YAG crystal, respectively. The maximum pulse energies obtained with the Cr4+:YAG crystal and with the AlGaInAs QWs were found to be 0.35 mJ and 0.45 mJ, respectively. (C) 2009 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleComparative studies for Cr4+:YAG crystal and AlGaInAs semiconductor used as a saturable absorber in Q-switched Yb-doped fiber lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.17.020800en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume17en_US
dc.citation.issue23en_US
dc.citation.spage20800en_US
dc.citation.epage20805en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000271630000023en_US
dc.citation.woscount9en_US
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