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dc.contributor.authorPei, JHen_US
dc.contributor.authorLin, CMen_US
dc.contributor.authorChuu, DSen_US
dc.date.accessioned2019-04-02T05:59:14Z-
dc.date.available2019-04-02T05:59:14Z-
dc.date.issued1998-02-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/149860-
dc.description.abstractWe report the characterization of polycrystalline CdTe films grown on Si(111) by using UHV sublimination techniques. Films grown at substrate temperature below 250 degrees C exhibited streaked X-ray diffraction patterns. To understand the native oxide on the film surface, the films were exposed to a laboratory air environment in the growth chamber for several days. The XPS spectra were taken after each Ar-ion sputtering of these oxidized films. In order to obtain more information from the measured XPS data, we performed core-level line-shape analysis. Based on previously reported studies, CdTe, TeO2, and element Te are constituents in the film, while Cd is almost all in the CdTe state. Raman scattering from oxidized CdTe film in the frequency of 550-900 cm(-1) reveals that TeO2 is the predominant oxide.en_US
dc.language.isoen_USen_US
dc.subjectmolecular and atomic beam epitaxyen_US
dc.subjectIII-V and II-VI compounds and systemsen_US
dc.subjectphotoemission and photoelectron spectraen_US
dc.titleCharacterization of CdTe film grown on a Si(111) substrateen_US
dc.typeArticleen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume36en_US
dc.citation.spage44en_US
dc.citation.epage52en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000071887500007en_US
dc.citation.woscount9en_US
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