Spectral Analysis of Noise Sources in InGaN Light Emitting Diodes

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Gray	en_US
dc.contributor.author	Su, Kuan-Lin	en_US
dc.contributor.author	Yang, Shih-Tsun	en_US
dc.contributor.author	Chen, Tzung-Te	en_US
dc.contributor.author	Chen, Chiu-Ling	en_US
dc.date.accessioned	2014-12-08T15:21:05Z	-
dc.date.available	2014-12-08T15:21:05Z	-
dc.date.issued	2011	en_US
dc.identifier.isbn	978-1-55752-910-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/14990	-
dc.description.abstract	Noise characterization of InGaN light emitting diodes shows that the exponent in current dependence of low-frequency flicker noise amplitude and the corner frequency in high-frequency generation-recombination noise spectra are two possible indicators for device reliability. (C) 2010 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Spectral Analysis of Noise Sources in InGaN Light Emitting Diodes	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000295612403200	-
顯示於類別：	會議論文