標題: Substrate engineering of LaAlO3 for non-polar ZnO growth
作者: Ho, Yen-Teng
Wang, Wei-Lin
Peng, Chun-Yen
Chen, Wei-Chun
Liang, Mei-Hui
Tian, Jr-Sheng
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: ZnO;LaAlO3;Epitaxial growth;Diffraction
公開日期: 31-三月-2010
摘要: We demonstrate that growth of non-polar ZnO in a-plane and m-plane can be achieved through substrate engineering of LaAlO3 with (001) and (112) surface X-ray diffraction, reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal that a-plane ZnO on LaAlO3 (001) consists of two types of domains perpendicular to each other with in-plane orientation relationships of [000](ZnO)//[1 (1) over bar0](LAO) and [1 (1) over tilde 00](ZnO)//[1 (1) over bar0](LAO) Single domain epitaxy of m-plane ZnO on LaAlO3 (112) can be obtained with in-plane orientation relationships of (10 (1) over bar0)(ZnO)//(112)(LAO), [0001](ZnO)//[(1) over bar 10](LAO) and [1 (2) over bar 10](ZnO)//[(1) over bar(1) over bar1](LAO). (C) 2009 Elsevier B.V All rights reserved
URI: http://dx.doi.org/10.1016/j.tsf.2009.08.013
http://hdl.handle.net/11536/149921
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.08.013
期刊: THIN SOLID FILMS
Volume: 518
起始頁: 2988
結束頁: 2991
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