標題: An Al2O3 AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications
作者: Wu, Yun-Chi
Lin, Yueh-Chin
Chang, Edward Yi
Lee, C. T.
Kei, Chi-Chung
Chang, Chia-Ta
Hsu, H. T.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-一月-2010
摘要: An AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) single- pole-double-throw (SPDT) switch using Al2O3 high-k gate dielectric by atomic layer deposition is fabricated. The MOS-PHEMT exhibited a comparable dc performance and a much lower gate current compared to PHEMT. Radio-frequency (rf) test shows that the MOS-PHEMT switch has an insertion loss of less than 0.5 dB, an isolation larger than 30 dB, a return loss larger than 15 dB, and an input power for 1 dB compression of 31.4 dBm at 2.5 GHz. Overall, MOS-PHEMT monolithic microwave integrated circuits switches have comparable rf performance to PHEMT switches but with much lower dc power consumption. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3380967] All rights reserved.
URI: http://dx.doi.org/10.1149/1.3380967
http://hdl.handle.net/11536/149928
ISSN: 1099-0062
DOI: 10.1149/1.3380967
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 13
顯示於類別:期刊論文