標題: Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells
作者: Wang, C. H.
Chang, W. T.
Chang, S. P.
Li, J. C.
Kuo, H. C.
Lu, T. C.
Wang, S. C.
光電工程學系
Department of Photonics
公開日期: 2011
摘要: InGaN/GaN LED with graded-thickness MQWs has superior hole and radiative recombination distribution by simulation modeling, and electroluminescence spectrum reveals additional emission from the narrower wells. Output power and efficiency droop behavior are both improved. (C) 2010 Optical Society of America
URI: http://hdl.handle.net/11536/14993
ISBN: 978-1-55752-910-7
期刊: 2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
Appears in Collections:Conferences Paper