標題: Universal Tunnel Mass and Charge Trapping in [(SiO2)(1-x)(Si3N4)(x)](1-y)Si-y Film
作者: Watanabe, Hiroshi
Matsushita, Daisuke
Muraoka, Kouichi
Kato, Koichi
電子工程學系及電子研究所
電子與資訊研究中心
Department of Electronics Engineering and Institute of Electronics
Microelectronics and Information Systems Research Center
關鍵字: Charge trapping;dangling bond (DB);direct tunneling (DT);gate dielectric;SiON;tunnel mass
公開日期: 1-五月-2010
摘要: Although the tunnel mass is indispensable to predict the gate leakage current of electron devices, it has been regarded as an adjustable parameter to fit the calculated leakage current with the measured ones. This appears useful because it enables calculation of the tunnel current while ignoring some details in advanced device modeling, even though it has veiled the intuitive nature of the modeling. More concretely, the adjustable tunnel mass pushes us to ignore the related issues that should carefully be considered. In this paper, we extract the tunnel masses for electrons and holes from an individual experiment and find that they are 0.85m(0), where m(0) is the rest electron mass, irrespective of the molecular compound ratio between Si3N4 and SiO2 and the film thickness. This suggests a convincing model for charge trapping in [(SiO2)(1-x)(Si3N4)(x)](1-y)Si-y including interfacial transition layers. It is also found that the leakage mechanism is the direct tunneling enhanced by the trapped positive charge.
URI: http://dx.doi.org/10.1109/TED.2010.2044676
http://hdl.handle.net/11536/149956
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2044676
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
起始頁: 1129
結束頁: 1136
顯示於類別:期刊論文