Title: Effects of CF4 Plasma Treatment on the Electrical Characteristics of Poly-Silicon TFTs Using a Tb2O3 Gate Dielectric
Authors: Pan, Tung-Ming
Li, Zhi-Hong
Deng, Chih-Kang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: CF4 plasma power;high-k;interface trap density;Tb2O3;thin-film transistors (TFTs)
Issue Date: 1-Jul-2010
Abstract: In this paper, we developed high-k Tb2O3 poly-Si thin-film transistors (TFTs) using different CF4 plasma power treatments. The high-k Tb2O3 poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high I-ON/I-OFF current ratio. This result is attributed to the incorporation of fluorine atoms into the Tb2O3/poly-Si interface to reduce the trap-state density. The high-k Tb2O3 poly-Si TFT prepared under a 20-W CF4 plasma power also enhanced electrical reliabilities, including hot carrier and positive bias temperature instability. All of these results suggest that the CF4 plasma-treated poly-Si Tb2O3 TFT is a good candidate for high-performance low-temperature poly-Si TFTs.
URI: http://dx.doi.org/10.1109/TED.2010.2047904
http://hdl.handle.net/11536/149969
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2047904
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Begin Page: 1519
End Page: 1526
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