Title: | Effects of CF4 Plasma Treatment on the Electrical Characteristics of Poly-Silicon TFTs Using a Tb2O3 Gate Dielectric |
Authors: | Pan, Tung-Ming Li, Zhi-Hong Deng, Chih-Kang 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | CF4 plasma power;high-k;interface trap density;Tb2O3;thin-film transistors (TFTs) |
Issue Date: | 1-Jul-2010 |
Abstract: | In this paper, we developed high-k Tb2O3 poly-Si thin-film transistors (TFTs) using different CF4 plasma power treatments. The high-k Tb2O3 poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high I-ON/I-OFF current ratio. This result is attributed to the incorporation of fluorine atoms into the Tb2O3/poly-Si interface to reduce the trap-state density. The high-k Tb2O3 poly-Si TFT prepared under a 20-W CF4 plasma power also enhanced electrical reliabilities, including hot carrier and positive bias temperature instability. All of these results suggest that the CF4 plasma-treated poly-Si Tb2O3 TFT is a good candidate for high-performance low-temperature poly-Si TFTs. |
URI: | http://dx.doi.org/10.1109/TED.2010.2047904 http://hdl.handle.net/11536/149969 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2010.2047904 |
Journal: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 57 |
Begin Page: | 1519 |
End Page: | 1526 |
Appears in Collections: | Articles |