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dc.contributor.authorChung, Yung-Huien_US
dc.contributor.authorWu, Jieh-Tsorngen_US
dc.date.accessioned2014-12-08T15:21:05Z-
dc.date.available2014-12-08T15:21:05Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-4434-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/14996-
dc.identifier.urihttp://dx.doi.org/10.1109/ASSCC.2009.5357197en_US
dc.description.abstracta 10-bit 100-MS/s two-step ADC was fabricated using a 90 nm CMOS technology. To reduce power dissipation, the ADC uses latch-type comparators for signal digitalization and an open-loop amplifier for residue amplification. The linearity of the residue amplifier is enhanced by digital background calibration. The resolution of the comparators is improved by analog offset calibration. The ADC consumes 6mW from a 1V supply. Measured SNR and SFDR are 58.2 dB and 75 dB respectively. Measured ENOB is 9.34b. The FOM is 100 fJ per conversion-step.en_US
dc.language.isoen_USen_US
dc.titleA CMOS 6-mW 10-bit 100-MS/s Two-Step ADCen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/ASSCC.2009.5357197en_US
dc.identifier.journal2009 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)en_US
dc.citation.spage137en_US
dc.citation.epage140en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000298194200035-
Appears in Collections:Conferences Paper


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