標題: Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode
作者: Huang, Jiun-Jia
Kuo, Chih-Wei
Chang, Wei-Chen
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MIM structures;platinum;rectification;Schottky barriers;Schottky diodes;titanium;titanium compounds
公開日期: 28-Jun-2010
摘要: We have fabricated a Ti/TiO2/Pt oxide diode with excellent rectifying characteristics by the asymmetric Schottky barriers at the Ti/TiO2 (0.13 eV) and the TiO2/Pt (0.73 eV) interfaces. Instead of homogeneous conduction, the current transport is governed by the localized oxygen-deficient TiO2 filaments. In addition, the reproducible resistive-switching exists in the same structure, triggered by the forming process. The transition between two modes is ascribed to the destruction of the interface barriers at forming. The rectification stable up to 125 degrees C and 10(3) cycles under +/- 3 V sweep without interference with resistive-switching shows satisfactory reliability of TiO2 diodes for one diode-one resistor memory devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457866]
URI: http://dx.doi.org/10.1063/1.3457866
http://hdl.handle.net/11536/149979
ISSN: 0003-6951
DOI: 10.1063/1.3457866
期刊: APPLIED PHYSICS LETTERS
Volume: 96
Appears in Collections:Articles