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dc.contributor.authorHuang, Hung-Wenen_US
dc.contributor.authorHuang, Jhi-Kaien_US
dc.contributor.authorKuo, Shou-Yien_US
dc.contributor.authorLee, Kang-Yuanen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2019-04-02T05:58:09Z-
dc.date.available2019-04-02T05:58:09Z-
dc.date.issued2010-06-28en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3456385en_US
dc.identifier.urihttp://hdl.handle.net/11536/149980-
dc.description.abstractIn this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456385]en_US
dc.language.isoen_USen_US
dc.subjectdislocationsen_US
dc.subjectgallium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectlight emitting diodesen_US
dc.subjectnanolithographyen_US
dc.subjectreflectivityen_US
dc.subjecttransmission electron microscopyen_US
dc.subjectwide band gap semiconductorsen_US
dc.titleHigh extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3456385en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume96en_US
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000279514400066en_US
dc.citation.woscount38en_US
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