完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, S. H.en_US
dc.contributor.authorMarinova, V.en_US
dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorPetrova, D.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorHsu, K. Y.en_US
dc.date.accessioned2019-04-02T05:57:53Z-
dc.date.available2019-04-02T05:57:53Z-
dc.date.issued2010-07-01en_US
dc.identifier.issn2040-8978en_US
dc.identifier.urihttp://dx.doi.org/10.1088/2040-8978/12/7/075601en_US
dc.identifier.urihttp://hdl.handle.net/11536/149986-
dc.description.abstractThe effect of Ru + Mn co-doping on the light-induced properties of Bi4Ge3O12 (BGO) crystals is studied and compared with single Ru- and Mn-doped crystals. Optical absorption spectra of Ru + Mn co-doped crystal demonstrates a photosensitivity shift to the visible spectral range. In addition, a strong photochromic effect, being fully reversible by thermal annealing is observed. It is verified by photoluminescence emission that charge traps could be manipulated under ultraviolet (UV) excitation, as the photoluminescence intensity decreases revealing the existence of the state filling effect. Ru + Mn doping leads to a faster response time during holographic recording at 633 nm and a prolonged read-out process, especially after a preliminary exposure to UV light. The ability to modify the defect structure and corresponding absorption bands suggests the future potential for optical fixing using a two-step sensitization method.en_US
dc.language.isoen_USen_US
dc.subjectoptical propertiesen_US
dc.subjectphotochromic effecten_US
dc.subjectphotoluminescenceen_US
dc.subjectdark conductivityen_US
dc.subjectholographyen_US
dc.titleLight-induced and holographic properties of ruthenium and manganese co-doped Bi4Ge3O12 crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/2040-8978/12/7/075601en_US
dc.identifier.journalJOURNAL OF OPTICSen_US
dc.citation.volume12en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000279944900013en_US
dc.citation.woscount0en_US
顯示於類別:期刊論文