Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Chang, Yu-Ming | en_US |
dc.contributor.author | Wen, Hua-Chiang | en_US |
dc.contributor.author | Yang, Chu-Shou | en_US |
dc.contributor.author | Lian, Derming | en_US |
dc.contributor.author | Tsai, Chien-Huang | en_US |
dc.contributor.author | Wang, Jyh-Shyang | en_US |
dc.contributor.author | Wu, Wen-Fa | en_US |
dc.contributor.author | Chou, Chang-Pin | en_US |
dc.date.accessioned | 2019-04-02T05:57:56Z | - |
dc.date.available | 2019-04-02T05:57:56Z | - |
dc.date.issued | 2010-08-01 | en_US |
dc.identifier.issn | 0026-2714 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.microrel.2010.05.003 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150000 | - |
dc.description.abstract | In this study, we used nanoscratch techniques under a ramping load to evaluate the abrasive wear of Zn1-xMnxO epilayers (0 <= x <= 0.16) grown through molecular beam epitaxy (MBE) on sapphire substrates. We analyzed the surface roughness and damage using atomic force microscopy (AFM) and nano-indenter techniques. The scratched surfaces of the Zn1-xMnxO epilayers were significantly different for the various Mn compositions. AFM imaging of the Zn1-xMnxO films revealed that pileup phenomena were important on both sides of each scratch. During the scratching process, we found that cracking dominated in the case of Zn1-xMnxO films while ploughing; also we observed lower values of the coefficient of friction and shallower penetration depths for the films upon increasing the Mn content (x) from 0 to 0.16, suggesting that higher Mn contents provided the Zn1-xMnxO epilayers with higher shear resistances, enhanced by the presence of MnO bonds. (C) 2010 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Evaluating the abrasive wear of Zn1-xMnxO heteroepitaxial layers using a nanoscratch technique | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.microrel.2010.05.003 | en_US |
dc.identifier.journal | MICROELECTRONICS RELIABILITY | en_US |
dc.citation.volume | 50 | en_US |
dc.citation.spage | 1111 | en_US |
dc.citation.epage | 1115 | en_US |
dc.contributor.department | 機械工程學系 | zh_TW |
dc.contributor.department | Department of Mechanical Engineering | en_US |
dc.identifier.wosnumber | WOS:000280987400012 | en_US |
dc.citation.woscount | 14 | en_US |
Appears in Collections: | Articles |