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dc.contributor.authorChang, Yu-Mingen_US
dc.contributor.authorWen, Hua-Chiangen_US
dc.contributor.authorYang, Chu-Shouen_US
dc.contributor.authorLian, Dermingen_US
dc.contributor.authorTsai, Chien-Huangen_US
dc.contributor.authorWang, Jyh-Shyangen_US
dc.contributor.authorWu, Wen-Faen_US
dc.contributor.authorChou, Chang-Pinen_US
dc.date.accessioned2019-04-02T05:57:56Z-
dc.date.available2019-04-02T05:57:56Z-
dc.date.issued2010-08-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2010.05.003en_US
dc.identifier.urihttp://hdl.handle.net/11536/150000-
dc.description.abstractIn this study, we used nanoscratch techniques under a ramping load to evaluate the abrasive wear of Zn1-xMnxO epilayers (0 <= x <= 0.16) grown through molecular beam epitaxy (MBE) on sapphire substrates. We analyzed the surface roughness and damage using atomic force microscopy (AFM) and nano-indenter techniques. The scratched surfaces of the Zn1-xMnxO epilayers were significantly different for the various Mn compositions. AFM imaging of the Zn1-xMnxO films revealed that pileup phenomena were important on both sides of each scratch. During the scratching process, we found that cracking dominated in the case of Zn1-xMnxO films while ploughing; also we observed lower values of the coefficient of friction and shallower penetration depths for the films upon increasing the Mn content (x) from 0 to 0.16, suggesting that higher Mn contents provided the Zn1-xMnxO epilayers with higher shear resistances, enhanced by the presence of MnO bonds. (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleEvaluating the abrasive wear of Zn1-xMnxO heteroepitaxial layers using a nanoscratch techniqueen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.microrel.2010.05.003en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume50en_US
dc.citation.spage1111en_US
dc.citation.epage1115en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000280987400012en_US
dc.citation.woscount14en_US
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