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dc.contributor.authorTrinh, H. D.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorWu, P. W.en_US
dc.contributor.authorWong, Y. Y.en_US
dc.contributor.authorChang, C. T.en_US
dc.contributor.authorHsieh, Y. F.en_US
dc.contributor.authorYu, C. C.en_US
dc.contributor.authorNguyen, H. Q.en_US
dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorLin, K. L.en_US
dc.contributor.authorHudait, M. K.en_US
dc.date.accessioned2019-04-02T05:57:57Z-
dc.date.available2019-04-02T05:57:57Z-
dc.date.issued2010-07-26en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3467813en_US
dc.identifier.urihttp://hdl.handle.net/11536/150003-
dc.description.abstractThe inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (D-it) at lower half-part of In0.53Ga0.47As band gap. This low D-it was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467813]en_US
dc.language.isoen_USen_US
dc.subjectaluminaen_US
dc.subjectannealingen_US
dc.subjectenergy gapen_US
dc.subjectgallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectindium compoundsen_US
dc.subjectinterface statesen_US
dc.subjectMOS capacitorsen_US
dc.subjectsurface treatmenten_US
dc.subjectX-ray photoelectron spectraen_US
dc.titleThe influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitoren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3467813en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume97en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000281059200068en_US
dc.citation.woscount98en_US
Appears in Collections:Articles