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dc.contributor.authorWu, Ya-Nanen_US
dc.contributor.authorLi, Zhi-Qingen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2019-04-03T06:38:37Z-
dc.date.available2019-04-03T06:38:37Z-
dc.date.issued2010-09-17en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.82.092202en_US
dc.identifier.urihttp://hdl.handle.net/11536/150034-
dc.description.abstractWe have measured the resistivities and Hall coefficients, R-H, of a series of nonmagnetic Mo-x(SnO2)(1-x) nanogranular films with the Mo volume fraction x ranging from similar to 0.29 to 1. We found that the magnitude of R-H(2 K) largely increased by a factor of similar to 800 as x was reduced from similar to 0.8 to similar or equal to 0.36. Then, it slightly decreased with a further decrease in x down to similar or equal to 0.32, which was determined to be the classical percolation threshold, x(c), from the resistivity dependence on x. This nearly 3 orders of magnitude enhancement in R-H at a metal volume fraction x > x(c) is explained in terms of the recent theoretical concept of the local quantum-interference effect induced giant Hall effect in granular systems.en_US
dc.language.isoen_USen_US
dc.titleGiant Hall effect in nonmagnetic Mo/SnO2 granular filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.82.092202en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume82en_US
dc.citation.issue9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000282004500001en_US
dc.citation.woscount9en_US
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