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dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorChen, Ying-Pinen_US
dc.contributor.authorHuang, Yu-Jenen_US
dc.contributor.authorChien, Shang-Chiehen_US
dc.date.accessioned2019-04-02T05:58:12Z-
dc.date.available2019-04-02T05:58:12Z-
dc.date.issued2010-10-13en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/43/40/405103en_US
dc.identifier.urihttp://hdl.handle.net/11536/150040-
dc.description.abstractWe have prepared organic thin-film transistors (OTFTs) featuring pentacene molecules deposited at various substrate temperatures onto either hexamethyldisilazane (HMDS)- or poly(alpha-methylsyrene) (P alpha MS)-treated SiO(2) surfaces. As a result, we obtained different grain boundary densities in the conducting channel. Since the surface-modified devices featured similar grain boundary densities in their active layers, but displayed different electrical performances, we suspected that different trap states probably existed at the grain boundaries for the two different kinds of OTFTs. In addition, the surface morphologies of the initial layers featured grain boundaries that were rather blurred for the thin films prepared on the P alpha MS-treated substrates, whereas shallow boundaries appeared for the pentacene layers on the HMDS-treated surfaces. Therefore, we deduced that the different surface treatment processes resulted in different Schwoebel (step-edge) barriers, and hence, different morphologies. These results suggested that different trap states existed at the grain boundaries of the two types of surface-treated devices, leading to variations in the electrical performance, even though the grain boundary densities were similar.en_US
dc.language.isoen_USen_US
dc.titleMorphological study on pentacene thin-film transistors: the influence of grain boundary on the electrical propertiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/43/40/405103en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume43en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000282059700007en_US
dc.citation.woscount10en_US
Appears in Collections:Articles