Title: Morphological study on pentacene thin-film transistors: the influence of grain boundary on the electrical properties
Authors: Chen, Fang-Chung
Chen, Ying-Pin
Huang, Yu-Jen
Chien, Shang-Chieh
光電工程學系
顯示科技研究所
光電工程研究所
Department of Photonics
Institute of Display
Institute of EO Enginerring
Issue Date: 13-Oct-2010
Abstract: We have prepared organic thin-film transistors (OTFTs) featuring pentacene molecules deposited at various substrate temperatures onto either hexamethyldisilazane (HMDS)- or poly(alpha-methylsyrene) (P alpha MS)-treated SiO(2) surfaces. As a result, we obtained different grain boundary densities in the conducting channel. Since the surface-modified devices featured similar grain boundary densities in their active layers, but displayed different electrical performances, we suspected that different trap states probably existed at the grain boundaries for the two different kinds of OTFTs. In addition, the surface morphologies of the initial layers featured grain boundaries that were rather blurred for the thin films prepared on the P alpha MS-treated substrates, whereas shallow boundaries appeared for the pentacene layers on the HMDS-treated surfaces. Therefore, we deduced that the different surface treatment processes resulted in different Schwoebel (step-edge) barriers, and hence, different morphologies. These results suggested that different trap states existed at the grain boundaries of the two types of surface-treated devices, leading to variations in the electrical performance, even though the grain boundary densities were similar.
URI: http://dx.doi.org/10.1088/0022-3727/43/40/405103
http://hdl.handle.net/11536/150040
ISSN: 0022-3727
DOI: 10.1088/0022-3727/43/40/405103
Journal: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 43
Appears in Collections:Articles