完整後設資料紀錄
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dc.contributor.authorChiang, Kuo-Changen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.date.accessioned2019-04-02T05:58:12Z-
dc.date.available2019-04-02T05:58:12Z-
dc.date.issued2010-10-22en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/21/42/425204en_US
dc.identifier.urihttp://hdl.handle.net/11536/150043-
dc.description.abstractNanocomposite thin films containing AgInSbTe (AIST) particles embedded in an SiO2 matrix was prepared by sputtering deposition and its feasibility for nonvolatile floating gate memory (NFGM) was investigated. The sample subjected to a 400 degrees C annealing exhibited a distinct hysteresis memory window (Delta V-FB) shift = 6.6 V and charge density = 5.2 x 10(12) cm(-2) after +/- 8 V gate voltage sweep. Electrical measurement revealed the current transport is via the Schottky emission in low applied field and the space-charge-limited conduction mechanism in high applied field in the samples, regardless of their thermal history. Transmission electron microscopy and x-ray photoelectron spectroscopy indicated that the metallic Sb2Te nanocrystals (NCs) with diameters about 5-7 nm dispersed in a nanocomposite layer may serve as the discrete charge-storage traps for nonvolatile memory. Analytical results illustrate the utilization of an AIST-SiO2 nanocomposite layer as the core structure of NFGM devices is able to simplify the device structure and fabrication process.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of AgInSbTe-SiO2 nanocomposite thin film applied to nonvolatile floating gate memory devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/21/42/425204en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume21en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000282125900006en_US
dc.citation.woscount8en_US
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