完整後設資料紀錄
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dc.contributor.authorLiang, S. W.en_US
dc.contributor.authorHsiao, H. Y.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2019-04-02T06:00:15Z-
dc.date.available2019-04-02T06:00:15Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-010-1333-yen_US
dc.identifier.urihttp://hdl.handle.net/11536/150070-
dc.description.abstractThe effect of Al-trace width on electromigration (EM) in flip-chip solder joints was investigated experimentally. EM tests were performed on eutectic Sn-Ag solders with 40-mu m- and 100-mu m-wide Al traces. Under the same stressing conditions (0.5 A at 165 degrees C), the failure time was 44.1 h for solder joints with 40-mu m-wide traces and 250.1 h for solder joints with 100-mu m-wide traces. The Al-trace width influenced both the current crowding and the Joule heating effects. Thus, both effects are responsible for the significant difference in failure time. Finite-element analysis was used to examine the current crowding effect in solder bumps with Al traces of the two different widths. The results showed that the current crowding effect was slightly higher in joints with 40-mu m-wide traces. In addition, the temperature coefficient was used to measure the real temperatures in the solder bumps during EM. The results indicated that the width of the Al traces had a substantial influence on the Joule heating effect. The measured temperature in the solder bump was 218.2 degrees C and 172.2 degrees C for the bump with 40-mu m- and 100-mu m-wide Al traces, respectively. This difference in the Joule heating effect plays a crucial role in causing the difference in the failure time of solder joints with the two different widths.en_US
dc.language.isoen_USen_US
dc.subjectElectromigrationen_US
dc.subjectelectronic packagingen_US
dc.titleEffect of Al-Trace Width on the Electromigration Failure Time of Flip-Chip Solder Jointsen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-010-1333-yen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume39en_US
dc.citation.spage2316en_US
dc.citation.epage2323en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000282789800020en_US
dc.citation.woscount0en_US
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