完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiang, Ru-Mengen_US
dc.contributor.authorChang, Yun-Minen_US
dc.contributor.authorWu, Pu-Weien_US
dc.contributor.authorLin, Pangen_US
dc.date.accessioned2019-04-02T06:00:18Z-
dc.date.available2019-04-02T06:00:18Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2010.04.073en_US
dc.identifier.urihttp://hdl.handle.net/11536/150074-
dc.description.abstractCu2O films were electrodeposited on stainless steel substrates followed by Ar annealing for photoelectrochemical hydrogen generation. Plating variables including time and pH for the plating bath were explored to obtain desirable film qualities. X-ray diffraction (XRD) patterns indicated that the as-deposited Cu2O films exhibited preferred orientations in (200) and (111) planes from the plating bath of pH 9 and pH 11, respectively. Images from scanning electron microscope (SEM) revealed pyramid-like grains in 1 mu m size for the Cu2O films from pH 9 plating bath and large plate-like grains in 3-8 mu m size from pH 11 plating bath. Identical results from SEM and XRD were obtained from the Cu2O films at longer plating time. After annealing at 350 degrees C for 30 and 60 min, the Cu2O phase was nicely maintained but SEM images demonstrated coarser grains. Photoelectrochemical activity for H-2 generation was obtained on the Cu2O films before and after annealing by recording relevant photoelectrochemical currents at -0.3 V in 0.5 M aqueous Na2SO4 solution. For the Cu2O films from both baths, substantial increments in photoelectrochemical current were observed for the annealed samples as opposed to as-deposited ones. The largest photoelectrochemical current was obtained at 0.143 mA/cm(2) from the Cu2O film of pH 9 plating bath with 60 min annealing, which exhibited a 560% increase over the as-deposited sample. We attributed the enhanced photoelectrochemical current to the improved crystallinity and reduced defects for the annealed Cu2O films. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectCu2Oen_US
dc.subjectElectrodepositionen_US
dc.subjectPhotoelectrochemical hydrogen generationen_US
dc.titleEffect of annealing on the electrodeposited Cu2O films for photoelectrochemical hydrogen generationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2010.04.073en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume518en_US
dc.citation.spage7191en_US
dc.citation.epage7195en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000282915100003en_US
dc.citation.woscount19en_US
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