完整後設資料紀錄
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dc.contributor.authorChen, Shih-Chengen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Wei-Renen_US
dc.contributor.authorLo, Yuan-Chunen_US
dc.contributor.authorWu, Kai-Tingen_US
dc.contributor.authorSze, S. M.en_US
dc.contributor.authorChen, Jasonen_US
dc.contributor.authorLiao, I. H.en_US
dc.contributor.authorYeh(Huang), Fon-Shanen_US
dc.date.accessioned2019-04-02T06:00:19Z-
dc.date.available2019-04-02T06:00:19Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2010.04.107en_US
dc.identifier.urihttp://hdl.handle.net/11536/150078-
dc.description.abstractIn this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNonvolatileen_US
dc.subjectNanocrystalsen_US
dc.subjectMemoryen_US
dc.subjectOxygenen_US
dc.subjectPlasmaen_US
dc.titleNonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatmentsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2010.04.107en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume518en_US
dc.citation.spage7339en_US
dc.citation.epage7342en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000282915100038en_US
dc.citation.woscount7en_US
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