標題: | Low temperature Ni-nanocrystals-assisted hybrid polycrystalline silicon thin film transistor for non-volatile memory applications |
作者: | Wang, Terry Tai-Jui Ma, William Cheng-Yu Hung, Shih-Wei Kuo, Cheng-Tzu 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Thin film transistor (TFT);Non-volatile memory (NVM);Nickel-nanocrystals (Ni-NCs) |
公開日期: | 1-十月-2010 |
摘要: | The nickel-nanocrystals (Ni-NCs)-embedded silicon nitride acting as a trapping layer has been successfully demonstrated to manipulate the charging and discharging of electrons in a thin film transistor (TFT) for nonvolatile memory (NVM) applications. Regarding device performance, with and without Ni-NCs in the stack and under a programming/erasing condition of +/-18 V for 1 s, a better threshold voltage shift of 3.2 V can be reached compared to a shift of 2.0 V for a stack without Ni-NCs. The shift is an index representing the value required to differentiate "0" or "1" states during operation. In this case, the diameter range and number density of Ni-NCs are 5-13 nm and 5.3 x 10(11) cm(-2), respectively. (C) 2010 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2010.05.010 http://hdl.handle.net/11536/150083 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2010.05.010 |
期刊: | THIN SOLID FILMS |
Volume: | 518 |
起始頁: | 7429 |
結束頁: | 7432 |
顯示於類別: | 期刊論文 |