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dc.contributor.authorCheng, Min-Yuanen_US
dc.contributor.authorChen, Kei-Weien_US
dc.contributor.authorLiu, Tzeng-Fengen_US
dc.contributor.authorWang, Ying-Langen_US
dc.contributor.authorFeng, Hsien-Pingen_US
dc.date.accessioned2019-04-02T06:00:17Z-
dc.date.available2019-04-02T06:00:17Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2010.05.026en_US
dc.identifier.urihttp://hdl.handle.net/11536/150085-
dc.description.abstractThis study investigates spontaneous microstructural evolution in electroplated Cu films with various plating current densities involving direct current and pulse-reverse waveforms and various possible driving forces. Studies have explained the grain growth and resistivity decrease during the self-annealing of as-deposited Cu film, but the incubation behavior of self-annealing under various direct current and pulse-reverse current waveforms at a certain film thickness is unknown. In this study, it was found that pulse-reverse current retards the incubation behavior more significantly than does direct current. According to the measurements of resistivity, stress, and secondary ion mass spectrometer, the large stress difference between the initial and critical values and the low impurity content of pulse-reverse current postponed the incubation, and led to a slow self-annealing rate. The combination of the stress difference and the impurity effect explains the incubation behavior of self-annealing under various plating current densities. The resistivity and X-ray diffraction results suggest that stress is the primary driving force that dramatically speeds up grain growth above the critical stress, and that high current density with a rapid grain growth rate enhances the (200) texture for strain energy minimization in electroplated Cu film. (C) 2010 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.titleEffects of direct current and pulse-reverse copper plating incubation behavior of self-annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2010.05.026en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume518en_US
dc.citation.spage7468en_US
dc.citation.epage7474en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000282915100067en_US
dc.citation.woscount14en_US
Appears in Collections:Articles