標題: Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition
作者: Ko, T. S.
Lu, T. C.
Zhuo, L. F.
Wang, W. L.
Liang, M. H.
Kuo, H. C.
Wang, S. C.
Chang, Li
Lin, D. Y.
材料科學與工程學系
光電工程學系
光電工程研究所
Department of Materials Science and Engineering
Department of Photonics
Institute of EO Enginerring
公開日期: 1-十月-2010
摘要: We reported optical properties of a-plane ZnO/ZnMgO multiple quantum wells (MQWs) structure grown by the pulse laser deposition system. The emission peak energy of a-plane ZnO/ZnMgO MQWs kept invariant in the power-dependent photoluminescence (PL) measurement, indicating the nonpolar characteristics due to the lack of built-in electric fields. Large exciton binding energy of 68 meV was deduced and no apparent S-curve appeared in temperature-dependent PL results, demonstrating less carrier localization effect in a-plane ZnO/ZnMgO MQWs. Large difference in electronic transition levels of 45 meV due to the valence band splitting was observed in the polarization dependent absorption spectrum. Furthermore, the high degree of polarization of 92% and 56% at 20 and 300 K in PL emission of a-plane ZnO/ZnMgO MQWs were obtained. (C) 2010 American Institute of Physics. [doi:10.1063/1.3488898]
URI: http://dx.doi.org/10.1063/1.3488898
http://hdl.handle.net/11536/150094
ISSN: 0021-8979
DOI: 10.1063/1.3488898
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 108
顯示於類別:期刊論文