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dc.contributor.authorSahoo, Kartika Chandraen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2019-04-02T06:00:30Z-
dc.date.available2019-04-02T06:00:30Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2010.2056150en_US
dc.identifier.urihttp://hdl.handle.net/11536/150097-
dc.description.abstractIn this paper, we, for the first time, examine the spectral reflectivity of hemisphere-, cone-, cylinder-, and parabola-shaped silicon nitride (Si3N4) subwavelength structures (SWSs). A multilayer rigorous coupled-wave approach is advanced to evaluate the reflection properties of Si3N4 SWSs. We optimize the aforementioned four different shapes of SWSs in terms of effective reflectance over a range of wavelength. The results of our paper show that a lowest effective reflectivity could be achieved for the optimized cone-shaped SWS as compared to hemisphere-, parabola-, and cylinder-shaped structures with the same volume. The best shape SWS is then fabricated together with a silicon (Si) solar cell, and the efficiency of the solar cell is compared with that of a solar cell with single-layer antireflection coating (ARC). An increase of 1.09% in cell efficiency (eta) is observed for the Si solar cell with a cone-shaped Si3N4 SWS (eta = 12.86%) as compared with the cell with single-layer Si3N4 ARCs (eta = 11.77%).en_US
dc.language.isoen_USen_US
dc.subjectAntireflection coating (ARC)en_US
dc.subjectefficiencyen_US
dc.subjectmorphological effecten_US
dc.subjectmultilayeren_US
dc.subjectreflectanceen_US
dc.subjectrigorous coupled-wave approachen_US
dc.subjectshape effecten_US
dc.subjectsilicon nitrideen_US
dc.subjectsubwavelength structure (SWS)en_US
dc.titleShape Effect of Silicon Nitride Subwavelength Structure on Reflectance for Silicon Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2010.2056150en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume57en_US
dc.citation.spage2427en_US
dc.citation.epage2433en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000283346500008en_US
dc.citation.woscount21en_US
Appears in Collections:Articles