完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Sahoo, Kartika Chandra | en_US |
dc.contributor.author | Li, Yiming | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2019-04-02T06:00:30Z | - |
dc.date.available | 2019-04-02T06:00:30Z | - |
dc.date.issued | 2010-10-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2010.2056150 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150097 | - |
dc.description.abstract | In this paper, we, for the first time, examine the spectral reflectivity of hemisphere-, cone-, cylinder-, and parabola-shaped silicon nitride (Si3N4) subwavelength structures (SWSs). A multilayer rigorous coupled-wave approach is advanced to evaluate the reflection properties of Si3N4 SWSs. We optimize the aforementioned four different shapes of SWSs in terms of effective reflectance over a range of wavelength. The results of our paper show that a lowest effective reflectivity could be achieved for the optimized cone-shaped SWS as compared to hemisphere-, parabola-, and cylinder-shaped structures with the same volume. The best shape SWS is then fabricated together with a silicon (Si) solar cell, and the efficiency of the solar cell is compared with that of a solar cell with single-layer antireflection coating (ARC). An increase of 1.09% in cell efficiency (eta) is observed for the Si solar cell with a cone-shaped Si3N4 SWS (eta = 12.86%) as compared with the cell with single-layer Si3N4 ARCs (eta = 11.77%). | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Antireflection coating (ARC) | en_US |
dc.subject | efficiency | en_US |
dc.subject | morphological effect | en_US |
dc.subject | multilayer | en_US |
dc.subject | reflectance | en_US |
dc.subject | rigorous coupled-wave approach | en_US |
dc.subject | shape effect | en_US |
dc.subject | silicon nitride | en_US |
dc.subject | subwavelength structure (SWS) | en_US |
dc.title | Shape Effect of Silicon Nitride Subwavelength Structure on Reflectance for Silicon Solar Cells | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2010.2056150 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 57 | en_US |
dc.citation.spage | 2427 | en_US |
dc.citation.epage | 2433 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000283346500008 | en_US |
dc.citation.woscount | 21 | en_US |
顯示於類別: | 期刊論文 |